激光雷达测距系统光源驱动设计  

Design of driving laser diode for ladar ranging system

作　　者：熊显名[1,2] 李三龙[1,2] 张文涛[1,2] 张良[1,2] 李鹏飞[1,2] 

机构地区：[1]桂林电子科技大学电子工程与自动化学院,广西桂林541004 [2]广西高校光电信息处理重点实验室,广西桂林541004

出　　处：《红外与激光工程》2016年第2期115-119,共5页Infrared and Laser Engineering

基　　金：广西省自然科学基金(2013GXNSFDA019002;2014GXNSFGA118003);桂林市科学研究与技术开发课题(20130122-2)

摘　　要：脉冲式激光雷达探测性能与激光光源发出的光脉冲密切相关,而激光二极管(LD)驱动电路性能直接决定了光脉冲的优劣。基于激光雷达系统要求,选用超快速金属氧化物半导体场效应管(MOSFET)作为开关器件,建立驱动电路模型,对驱动电路设计与分析,经过多次试验,成功设计出最小脉宽10 ns,上升沿3.5 ns,重复频率可达50 k Hz的LD驱动电路。驱动LD峰值功率将近60 W,成功用于激光雷达光源部分,测距精度达到3 cm/10.77 m,满足激光雷达系统要求。Pulsed laser radar detection performance is associated with laser optical pulse emitted by laser light source, and the performance of power supply directly determines the quality of optical pulse. According to the requirements of laser radar system, the high power MOSFET was used as switching device and the driving circuit model was established, designed and analyzed. The driving circuit with 10 ns minimum pulse width, 3.5 ns rising time and 50 kHz pulse repetition frequency was obtained successfully after much experiments. The optical peak power of LD nearly reached 60 W, and it was successfully applied in laser radar as laser emission part. The 3 cm/10.77 m accuracy can satisfy the requirement of a laser radar.

关 键 词：脉冲式激光雷达 光脉冲 金属氧化物半导体场效应管 峰值功率 

分 类 号：TN249[电子电信—物理电子学] TN710