掺杂铌和钴元素的PZT薄膜的残余应力测定  

Measurement of Residual Stress in PZT Thin Film with Nb and Co Dopants

作　　者：陈泓霖[1,2] 李伟[1,2] 武鹏飞[1,2] 丁长路[1,2] 杨凯 

机构地区：[1]重庆大学新型微纳器件与系统技术国防重点学科实验室,重庆400044 [2]重庆大学微系统研究中心,重庆400044

出　　处：《压电与声光》2016年第1期42-45,共4页Piezoelectrics & Acoustooptics

基　　金：中央高校基本科研业务费专项基金资助项目(106112014CDJZR160001)

摘　　要：锆钛酸铅(PZT)薄膜具有优异的压电性能,是制作微机电系统(MEMS)振动式能量收集器的理想材料。在溶胶-凝胶法制备PZT薄膜的过程中产生的残余应力会对能量收集器有负面影响。该文利用X线衍射法对在退火温度分别为650℃、700℃、750℃、800℃下掺杂铌(Nb)和钴(Co)元素的PZT薄膜样品的残余应力进行了测定。实验结果表明,PZT薄膜样品中的残余应力表现为压应力,从650℃升高到750℃的过程中,随着退火温度的升高薄膜中的残余应力增大;直到750℃附近后,残余应力基本保持稳定。The PZT thin film is an ideal material for fabricating MEMS vibration energy harvester because of it′s excellent piezoelectric properties.The residual stress generated in the preparation of PZT thin films with the SolGel process has negative effects on the energy collector.In this paper,the residual stress in PZT thin film with Nb and Co dopants was measured by the X ray diffraction method,and the film samples were annealed at 650℃,700℃,750 ℃,800 ℃ respectively.The results show that the residual stress in the PZT thin film samples is compressive stress.From 650 ℃to 750℃,the residual stress in the films will be increased with the addition of annealing temperature.The residual stress will be remained stable when the annealing temperature is about 750 ℃.

关 键 词：溶胶-凝胶法 PZT薄膜 残余应力 X线衍射法 退火温度 

分 类 号：TN384[电子电信—物理电子学] TB383[一般工业技术—材料科学与工程]