应用于RFID的超低功耗CMOS温度传感器设计  

Design of ultra-low power consumption CMOS temperature sensor applied in RFID

作　　者：吴翔[1] 邓芳明[1,2] 何怡刚[2] 丁青锋[1] 

机构地区：[1]华东交通大学电气与电子工程学院,江西南昌330013 [2]合肥工业大学电气与自动化学院,安徽合肥230009

出　　处：《传感器与微系统》2016年第2期106-108,112,共4页Transducer and Microsystem Technologies

基　　金：国家杰出青年科学基金资助项目(50925727);教育部科学技术研究重大项目(313018);安徽省科技计划重点资助项目(1301022036);江西省科技厅青年科学基金资助项目(20142BAB217008);华东交通大学校立科研基金资助项目(14DQ08)

摘　　要：针对融合射频识别（RFID）的无线温度传感器节点设计的需求,采用0.18μm 1P6M台积电CMOS工艺,设计了一种低功耗集成温度传感器。该温度传感器首先将温度信号转换为电压信号,然后通过经压控振荡器将电压信号转换为受温度控制的频率信号,再通过计数器,将频率信号转换为数字信号。传感器电路利用MOS管工作在亚阈值区,并采用动态阈值技术获得超低功耗。测试结果显示：所设计的温度传感器仅占用0.051 mm2,功耗仅为101 n W,在0~100℃范围内误差为-1.5~1.2℃。Aiming at design demand for wireless temperature sensor node which integrates RFID,design a low power consumption integrated temperature sensor,using 0. 18 μm 1P6 M CMOS process,design an integrated temperature sensor with low power consumption. Firstly,it transfers temperature signal to voltage signal,which is then converted to frequency signal by a voltage-controlled oscillator and the frequency signal is finally converted to digital signal by counter. Sensor circuit works in sub-threshold region and employs dynamic threshold-voltage to achieve ultra-low power consumption. Later period test result show that the designed temperature sensor only covers an area of 0. 051 mm2,consumes only 101 n W power with an error- 1. 5 ~ 1. 2 ℃,at range of 0~ 100 ℃.

关 键 词：温度传感器 射频识别技术 互补金属氧化物半导体工艺 

分 类 号：TP212.2[自动化与计算机技术—检测技术与自动化装置]