基于半导体开关和LTD技术的高重频快沿高压脉冲源  

High power high repetitive frequency generator based on MOSFET and LTD technology

作　　者：郭帆[1] 贾伟[1] 谢霖燊[1] 杨实[1] 陈志强[1] 汤俊萍[1] 李俊娜[1] 杨天[1] 

机构地区：[1]西北核技术研究所强脉冲辐射环境模拟与效应国家重点实验室,西安710024

出　　处：《强激光与粒子束》2016年第5期113-117,共5页High Power Laser and Particle Beams

基　　金：国家预先研究项目(51317030105)

摘　　要：采用快开通功率MOSFET,通过优化驱动电路、磁芯参数以及耦合结构,设计了基于半导体开关和直线变压器驱动源(LTD)技术的高重频快沿高压脉冲源。该脉冲源由四级LTD串联而成,可实现单次脉冲和最高频率2 MHz脉冲串输出。脉冲最高幅值约2.3kV,上升沿约7ns,脉宽约90ns,下降沿约20ns,输出电压效率约95%。该脉冲源结构紧凑,输出脉冲稳定,实现了模块化设计,可作为重频电磁脉冲模拟源使用。Based on fast switching power MOSFET,by using a high repetitive frequency integrated drive chip and a high efficiency magnetic coupling structure,the compact high power repetitive frequency generator is designed.This generator is constructed by four stages LTD and tested for a single shot and repetitive operation at 2MHz.Near-rectangle waveforms are obtained on the resistance of 200Ω,with an output voltage of 2.27 kV,a rise time of 6.8ns,apulse width of 91 ns,and a fall time of 20 ns.The overall system voltage efficiency is up to 95%.The generator can be used for research of repetitive frequency pulse effect because of its compactness,stableness and modularity.

关 键 词：功率MOSFET 直线变压器驱动源 高重频 窄脉冲 小型化 模块化 

分 类 号：TM89[电气工程—高电压与绝缘技术]