Mobility enhancement of strained GaSb p-channel metal-oxide-semiconductor field-effect transistors with biaxial compressive strain  

作　　者：陈燕文 谭桢 赵连锋 王敬 刘易周 司晨 袁方 段文晖 许军 

机构地区：[1]Department of Physics Tsinghua University [2]Tsinghua National Laboratory for Information Science and Technology Institute of MicroelectronicsTsinghua University [3]Department of Electrical Engineering Princeton University [4]School of Materials Science and Engineering Beihang University

出　　处：《Chinese Physics B》2016年第3期448-452,共5页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China(Grant No.2011CBA00602);the National Science and Technology Major Project of the Ministry of Science and Technology of China(Grant No.2011ZX02708-002)

摘　　要：Various biaxial compressive strained GaSb p-channel metal-oxide-semiconductor field-effect transistors （MOSFETs） are experimentally and theoretically investigated, The biaxial compressive strained GaSb MOSFETs show a high peak mobility of 638 cm2/V.s, which is 3.86 times of the extracted mobility of the fabricated GaSb MOSFETs without strain. Meanwhile, first principles calculations show that the hole effective mass of GaSb depends on the biaxial compressive strain. The biaxiai compressive strain brings a remarkable enhancement of the hole mobility caused by a significant reduction in the hole effective mass due to the modulation of the valence bands.Various biaxial compressive strained GaSb p-channel metal-oxide-semiconductor field-effect transistors （MOSFETs） are experimentally and theoretically investigated, The biaxial compressive strained GaSb MOSFETs show a high peak mobility of 638 cm2/V.s, which is 3.86 times of the extracted mobility of the fabricated GaSb MOSFETs without strain. Meanwhile, first principles calculations show that the hole effective mass of GaSb depends on the biaxial compressive strain. The biaxiai compressive strain brings a remarkable enhancement of the hole mobility caused by a significant reduction in the hole effective mass due to the modulation of the valence bands.

关 键 词：GASB metal-oxide-semiconductor field-effect transistor STRAIN first principles calculations 

分 类 号：TN386[电子电信—物理电子学]