毫米波RF MEMS开关的研制  

Study and Development of Millimeter Wave RF MEMS Switch

作　　者：党元兰[1] 赵飞[1] 梁广华[1] 刘晓兰[1] 徐亚新[1] 

机构地区：[1]中国电子科技集团公司第54研究所,河北石家庄050081

出　　处：《电子工艺技术》2016年第1期35-39,共5页Electronics Process Technology

摘　　要：RF MEMS开关加工工序多,过程复杂,加工难度较大,影响开关加工质量的因素众多。从工艺流程入手,对加工过程中的牺牲层平坦化、牺牲层释放、薄膜微桥厚度及均匀性控制、薄膜微桥应力处理等关键技术和重要影响因素进行了分析。研制的20-40 GHz RF MEMS开关,其插入损耗≤0.4 d B,回波损耗≤-20 d B,隔离度≥20 d B,驱动电压50-100 V,热切换寿命≥106次。During the fabrication of RF MEMS switch, the processing is usually complex and complicated, which leads to the numerous effects to the quality. The processing flow was presented, and the key technologies of sacrifice layer flattening and releasing, thin film micro-bridge thickness and uniformity control and stress processing were analyzed. RF MEMS switch with frequency from 20 GHz to 40 GHz was studied, whose insertion loss is less than 0.4 dB, return loss is less than -20 dB, isolation is greater than 20 dB, driving voltage is 50 V to 100 V, and hot swap lifetime is greater than 10^6.

关 键 词：RF MEMS开关 牺牲层平坦化 牺牲层释放 薄膜微桥 应力释放 

分 类 号：TN4[电子电信—微电子学与固体电子学]