共振隧穿二极管近红外探测器的电流抑制方法研究  

Current Suppression of Resonant Tunneling Diode Photodetector Working at Near-Infrared Wavelengths

作　　者：裴康明 詹锋[1] 倪海桥[2] 董宇[2] 牛智川[2] 

机构地区：[1]广西大学有色金属及材料加工新技术教育部重点实验室,广西南宁530004 [2]中国科学院半导体研究所半导体超晶格国家重点实验室,北京100084

出　　处：《激光与光电子学进展》2016年第2期58-63,共6页Laser & Optoelectronics Progress

基　　金：国家973计划(2013CB932904;2012CB932701);国家自然科学基金(11364003;61274125;61274013;61435012;2012YQ140005);河北省自然科学基金(A2015506019);广西自然科学基金(2013GXNSFBA019019;2014GXNSFAA118025);广西有色金属及特色材料加工省部共建国家重点实验室培育基地开放基金(GXKFJ12-01);中国工程物理研究院高功率激光器实验室开放基金(2013HEL03)

摘　　要：针对共振隧穿二极管近红外探测器焦平面阵列本征电流较大的问题,提出了一种通过对共振隧穿二极管近红外探测器双势垒结构(DBS)进行p型掺杂来抑制电流的方法,并用有限元软件对探测器进行了模拟。研究了单势垒p型掺杂、双势垒p型掺杂、双势垒结构p型掺杂及p型掺杂浓度对探测器本征电流抑制效果的影响。模拟结果显示,对双势垒结构进行p型掺杂后,探测器的隧穿峰值电流比非掺杂的双势垒结构的探测器的隧穿峰值电流小将近3个数量级。随着双势垒结构p型掺杂浓度的增加,器件本征电流会相应地减小。对器件进行了制备以及测试,结果表明,将双势垒结构进行p型掺杂,对探测器的本征电流有明显的抑制作用。Aiming at the problem of oversize eigen current of resonant tunneling diode photodetector focal plane array working at near-infrared wavelengths, a method that using p-doped type in double barriers structure （DBS） of resonant tunneling diode photodetector working at near-infrared wavelengths to suppress eigen current is presented. The current-voltage characteristics are simulated by finite element software. Effects of single barrier p- doped, double barriers p-doped, DBS p-doped and concentrations of p-doping on the eigen current suppression are researched. Simulation results show that the peak tunneling current of the detector with p-doped in DBS reduces about 3 orders of magnitude compared with that of the detector with undoped DBS. It is also found that the eigen current reduces with the increasing of the doping concentration of the DBS. The proposed device has been fabricated and tested. The results demonstrate that the eigen current is effectively suppressed when the DBS is doped in p-type.

关 键 词：探测器 共振隧穿二极管 本征电流 有限元仿真 双势垒结构 

分 类 号：TN215[电子电信—物理电子学]