椭圆柱TSV传输结构的性能研究  

Study on performance of elliptical column TSV structure

作　　者：李晶晶[1] 缪旻[1,2] 

机构地区：[1]北京信息科技大学信息微系统研究所,北京100101 [2]北京大学微米/纳米加工技术国家级重点实验室,北京100871

出　　处：《北京信息科技大学学报（自然科学版）》2016年第1期10-16,共7页Journal of Beijing Information Science and Technology University

基　　金：国家自然科学基金资助项目(61176102;60976083;60501007);北京市属高等学校高层次人才引进与培养计划资助项目(CIT&TCD20150320);北京市自然科学基金项目(3102014)

摘　　要：针对系统级封装技术中硅通孔(through silicon via,TSV)阵列密度日益增加的问题,提出了一种新型的椭圆柱TSV结构以及相应的GS(地—信号)传输结构。建立这一新型传输结构的等效电路模型,提取其电阻、电感和电容等元件参数。分析该新型TSV结构的物理尺寸及绝缘层厚度对传输结构性能的影响。在三维电磁场求解器中,将基于椭圆TSV的GS传输结构与传统圆柱形TSV结构进行对比,发现在保证特性阻抗不变的情况下,该结构表面电场分布更均匀,传输性能也有所提升,而且占用的芯片面积更小。考虑实际应用,将2种TSV结构添加再分布层(redistribution layer,RDL)后,再次进行比较。实验结果表明,基于椭圆柱TSV的传输结构可以很好地替代常规结构,而且有利于提升TSV阵列密度,解决日益紧张的布线空间对三维高密度集成带来的挑战。Considering the challenges coming from increasing density of TSV （through silicon via） array in the system-in-package technology, a new elliptical column TSV is presented. The equivalent circuit model of the GS （ground-signal） transmission structure based on the new TSV is proposed, and the values of resistance, capacitance and inductance within the model are extracted. The effects of TSV structural parameters and insulation thickness on transmission performance are examined using a three- dimensional full-wave electromagnetic field solver and their results are explained. Under the condition that the characteristic impedances are equal, compared to the GS structure based on conventional TSV, the electric field distribution of the proposed structure is more uniform. The transmission performance is also improved and the occupied chip area is smaller. Aiming at application, the two TSV structures are again analyzed and considered together with the RDL （redistribution layer）. The results show that the new TSV structure can replace the conventional structure well. It is also beneficial to the increase of the TSV array density, and to the relief of pressure of limited TSV space on the 3 D integration.

关 键 词：系统级封装 硅通孔 GS(地—信号)传输结构 

分 类 号：TN454[电子电信—微电子学与固体电子学]