铜溅射时间对Cu_2ZnSnS_4薄膜性能的影响  

Effect of Copper Sputtering Time on the Property of Cu_2ZnSnS_4 Thin Film

作　　者：华中[1] 龙东[1] 孟祥成[1] 于万秋[1] 

机构地区：[1]吉林师范大学功能材料物理与化学教育部重点实验室,吉林四平136000

出　　处：《吉林师范大学学报（自然科学版）》2016年第1期12-15,共4页Journal of Jilin Normal University:Natural Science Edition

基　　金：吉林省教育厅"十二五"科学技术研究项目(2014-485)

摘　　要：采用磁控溅射方法制备铜溅射时间分别为1.5 h和2 h的Cu/Sn/ZnS前驱体薄膜,然后利用双温区高温管式炉对两种薄膜进行硫化处理制备Cu_2ZnSnS_4.利用X射线衍射仪、拉曼光谱仪、扫描电子显微镜、能谱分析仪和紫外—可见分光光度计对薄膜的结构、表面形貌、化学成分和光学性能进行表征.结果表明:溅射1.5 h的Cu制备的薄膜表面存在大量杂质,表面很不平整;溅射2 h的Cu的薄膜表面呈现均匀致密的颗粒状薄膜,且具有更大的晶粒尺寸;溅射2 h的Cu的薄膜为单一CZTS相,其化学成分原子比更接近Cu_2ZnSnS_4化学计量比.The Cu/Sn/ZnS precursors films were prepared by magnetron sputtering method for copper sputtering time 1.5 h and 2 h. Then the two kinds of Cu2ZnSnS4 films were sulfurized in the dual-zone temperature tube furnace. The mierostructure, surface morphology, chemical composition and optical property of the samples were investigated by X-ray diffraction, Raman spectroscopy, Scanning electron microscope, Energy dispersive spectrum and UV-visible-infrared spectrophotometer. The main results are as follows：a large amount of impurities were observed on the surface of the thin film sputtered 1.5 h Cu and its surface was very uneven. The surface of the thin film sputtered 2 h Cu exhibited compact and uniform grain characteristics and the thin film had larger grain size. The thin film sputtered 2 h Cu was a single CZTS phase and its chemical composition was closer to Cu2ZnSnS4 stoichiometric ratio.

关 键 词：Cu2ZnSnS4 磁控溅射 薄膜 硫化 

分 类 号：TB332[一般工业技术—材料科学与工程]