TVS在10/700μs冲击电压作用下的性能分析  

Characteristic Analysis of TVS under 10/700 μs Impulse Voltage Testing Wave

作　　者：李祥超[1] 蔡露进 杨悠[1] 徐晓培[1] 董昌鑫[1] 

机构地区：[1]南京信息工程大学中国气象局气溶胶-云-降水重点开放实验室,江苏南京210044

出　　处：《电器与能效管理技术》2016年第3期12-16,共5页Electrical & Energy Management Technology

基　　金：973国家重点基础研究计划(2014CB441405);大学生省级指导项目(201510300085)

摘　　要：根据IEC 61643-21:2012中的信号网络电涌保护器性能要求和试验方法的规定,针对B2类试验中采用10/700μs冲击电压测试信号网络电涌保护器冲击限制电压的问题。通过对TVS的P-N结击穿理论的分析,并利用10/700μs冲击电压发生器对不同直流击穿电压的TVS进行冲击试验发现:随着冲击电压的升高,直流击穿电压越大的TVS在同一冲击电压下电流的幅值越小;随着冲击电压的增加,TVS的残压略有递增的趋势,TVS的吸收能量与冲击电压呈正相关;同一冲击电压下,直流击穿电压越高的TVS吸收的能量越多。Based on the IEC 61643-21： 2012 rules about performance requirements and test methods of network signal surge protection device（ SPD）,according to the B2 test using 10 /700 μs impulse voltage to test the impulse limit voltage of the signal network voltage surge protection device（ SPD）. By TVS theory of P-N junction breakdown analysis,and the use of different 10 /700 μs impulse voltage surge generator DC TVS breakdown voltage impulse test,the results as follows,TVS with the higher DC breakdown voltage have lower current under the same impulse voltage; with the increasing of impulse voltage,residual voltage of TVS has a modest rise. The energy absorbed by TVS is proportional to impulse voltage. Under the same impulse voltage,TVS with the higher DC breakdown voltage can absorb more energy.

关 键 词：10/700μs冲击电压 TVS 通流 残压 能量 

分 类 号：TM862[电气工程—高电压与绝缘技术]