高能电子辐照和退火对磷锗锌晶体红外光学性质的影响  

Influence of High-energy Electron Irradiation and Annealing on the Infrared Optical Properties of ZnGeP_2 Crystals

作　　者：刘伟[1] 朱世富[1] 赵北君[1] 陈宝军[1] 何知宇[1] 杨登辉[1] 谢虎[1] 赵张瑞 

机构地区：[1]四川大学材料科学与工程学院,成都610064

出　　处：《人工晶体学报》2016年第2期301-303,共3页Journal of Synthetic Crystals

基　　金：国家自然科学基金重点项目(50732005)

摘　　要：对采用改进的垂直布里奇曼法生长出的磷锗锌(ZnGeP2)单晶体样品,在300 K,10 MeV高能电子束下进行辐照实验,测试辐照前后其红外透过率。同时,对样品进行同成分粉末包裹退火处理,对比两种工艺对磷锗锌晶体红外透过率的影响。实验结果表明,退火和高能电子辐照都能对磷锗锌晶体的红外光学性质产生影响,提高其红外透过率。在本文的实验条件下,退火工艺对磷锗锌晶体红外透过率的提高更为明显。An integral ZnGeP2 single crystal was grown by modified vertical Bridgman method. Results were presented on the infrared transmittance of ZnGeP2 crystals before and after electron irradiation（ 10 MeV,300 K）. On the other side, the results of annealing were presented for comparing. The experimental results show that both high-energy electron irradiation and annealing can improve the infrared transmittance of ZnGeP2,and that annealing improves more under the mentioned conditions.

关 键 词：磷锗锌 高能电子辐照 退火 红外透过率 

分 类 号：O774[理学—晶体学]