镀碳石英坩埚生长ZnGeP_2单晶体  

Growth of ZnGeP_2 Single Crystal in Double Crucible Coated Carbon Films

作　　者：赵欣[1] 李梦[1] 朱世富[2] 吴小娟[1] 

机构地区：[1]中国民用航空飞行学院,广汉618307 [2]四川大学材料科学与工程学院,成都610064

出　　处：《人工晶体学报》2016年第2期356-360,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金重点项目(50732005);中国民用航空飞行学院科研基金项目(J2014-92)

摘　　要：在熔体法生长ZnGeP2单晶体的过程中,如何解决熔体与坩埚的粘连问题是一个研究关键。本文研究了石英坩埚的镀碳工艺,采用化学气相沉积法成功在坩埚内壁镀上结合牢固且均匀的碳膜。采用垂直布里奇曼法,并结合适时补温技术,在内部镀碳的双层坩埚中成功生长出Ф20 mm×50 mm外观完整,无裂纹的ZnGeP2单晶体。经XRD,TEM,FTIR分析结果表明:生长的ZnGeP2晶体缺陷少,结构完整,红外透过率高,是质量较高的单晶体。During the ZnGeP2 crystal growth by melt method,how to resolve the problem of conglutination with melt and crucible is very important. In this paper,a novel procedure for carbon coating in the inner side of quartz crucible by pyrolysis of organic CH4 vapor using Chemical Vapor Deposition（ CVD）method has been developed. The carbon coated quartz crucibles were used for ZnGeP2 crystal growth,A good quality ZnGeP2 single crystal with 20 mm in diameter and 50 mm in length was grown by Vertical Bridgman method with real-time temperature compensation technique（ RTTCT） during descending ampoule. The as-grown single crystal was characterized by XRD,TEM and FTIR. The characterization results demonstrate that the quality of as-grown ZnGeP2 crystal is good,which has lesser defects,intact structure and high infrared transmission. It is acceptable for the fabrication of the infrared nonlinear optical devices.

关 键 词：磷锗锌 单晶生长 镀碳 双层坩埚 

分 类 号：TN304.2[电子电信—物理电子学] O782[理学—晶体学]