AlGaInP材料LED微阵列热学特性分析  

Thermal Analysis of AlGaInP-Based LED Microarray

作　　者：李贺[1,2] 梁静秋[1] 梁中翥[1] 田超[1] 秦余欣[1] 吕金光[1] 王维彪[1] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所应用光学国家重点实验室,吉林长春130033 [2]中国科学院大学,北京100049

出　　处：《光学学报》2016年第1期246-253,共8页Acta Optica Sinica

基　　金：国家自然科学基金(61274122);吉林省科技发展项目(20100351;20120323);长春市科技发展计划项目(12ZX21)

摘　　要：发光二极管(LED)微阵列芯片在工作时积累的热量使结温过高,进而对LED微阵列芯片造成一系列不利影响,严重降低LED微阵列芯片工作的可靠性,甚至造成永久性损坏。散热问题是制约LED微阵列芯片工作性能提高的关键因素,是LED微阵列芯片在制备过程中亟待解决的问题之一。利用有限元分析软件,针对AlGaInP材料LED微阵列建立了有限元模型,详细介绍了实体模型建立、网格划分以及边界条件的施加方法。瞬态分析了在脉冲电流驱动下,单个单元和3×3单元工作时阵列的温度场分布,以及温度随时间的变化规律。为了改善阵列芯片的散热性能,设计了一种热沉结构,模拟分析了热沉结构对阵列温度分布的影响。The accumulated heat of light emitted diode （LED） microarray chip at work will result in an excessive junction temperature, which causes a series of adverse effects on the LED microarray chip, severely reduce the reliability of LED microarray chip and even cause permanent damage. Heat dissipation is a key factor that restricts the improvement of working performance of LED microarray, making it an urgent problem to be solved in the manufacturing process of LED microarray chip. A i＇mite element model of A1GaInP-based LED microarray has been built, and the way of modeling, meshing and applying of the boundary conditions has been introduced. Temperature distributions have been analyzed respectively when a single unit and 3×3 units are driven by a pulse current. In order to improve the heat dissipation performance of LED microarray, a structure of heatsink has been designed, the influence of the heatsink on temperature distribution of microarray has been analyzed.

关 键 词：光学器件 热学特性 有限元分析 发光二极管微阵列 热沉 ALGAINP 

分 类 号：TN383[电子电信—物理电子学]