砂浆辅助固结磨料研磨蓝宝石研究  

Sapphire machined by SiC assisted fixed abrasive lapping

作　　者：朱琳[1] 朱永伟[1] 徐胜 李信路 沈琦[1] 

机构地区：[1]南京航空航天大学机电学院,南京210016

出　　处：《金刚石与磨料磨具工程》2016年第1期6-10,24,共6页Diamond & Abrasives Engineering

基　　金：国家自然科学基金项目(51175260);航空基金(2014ZE52055)

摘　　要：金刚石固结磨料垫研磨蓝宝石晶片时,因磨屑细小导致研磨垫自修整能力严重不足,制约了其工业应用。本实验尝试用向研磨液中添加碳化硅颗粒的办法,辅助磨屑改善研磨垫的自修整能力。分别制备了不含磨料和含金刚石磨料（粒度尺寸为20~30μm）的研磨垫,比较其在不同研磨条件下的材料去除率和研磨后工件表面形貌,探索研磨液中碳化硅颗粒的作用机制。结果表明：研磨液中添加的碳化硅颗粒加快了研磨垫基体的磨损,有利于亚表层金刚石颗粒的出露,实现了研磨垫的自修整过程,材料去除速率明显提高,提高近14倍。Owning to insufficient self-conditioning ability affected by tiny chip,sapphire lapped by fixed abrasive pad is limited in industry.SiC particles were added to slurry to assist chips in conditioning pad in this study.Two different pads,one containing diamond abrasives（grain size 20—30μm）and the other not,were made for experiment.The material removal rate and topography of sapphire at different conditions were compared to explore the influence of SiC on lapping process.Results showed that the SiC particles added to slurry assisted in improving self-conditioning of pad by increasing wear of resins and exposing diamond abrasives out of sub-surface.Material removal rate of slurry with SiC particles was 14 times higher than that of slurry without SiC.

关 键 词：固结磨料研磨垫 碳化硅颗粒 蓝宝石晶片 自修整 

分 类 号：TG58[金属学及工艺—金属切削加工及机床] TG73