CMOS器件单粒子锁定效应及其防护设计  

Single Event Latch-up in CMOS and It's Protection Design

作　　者：吕强[1] 张朝晖[1] 洑小云 邓明[1] 李文华[1] 

机构地区：[1]中国电子科技集团公司第三十六研究所,浙江嘉兴314033

出　　处：《通信对抗》2015年第4期45-48,共4页Communication Countermeasures

摘　　要：介绍了体硅CMOS器件单粒子锁定原理,讨论了抗单粒子锁定指标、器件制造工艺和电路防护设计方法。对某工业级DDS器件抗单粒子锁定电路加固设计进行了研究,并开展了单粒子锁定辐射验证试验。试验结果表明,通过实时检测器件供电电流来控制器件断电并重启的保护方法对抗单粒子锁定是有效的。This paper presents the principium of single event latch-up（SEL） in bulk CMOS devices and discusses the index of SEL-hardened、manufacture process technology of devices and protection circuit design. A SEL resisting protection circuit for industry level DDS device was designed and SEL radicalization validate test has been performed. The examination result indicated that the protection design to SEL-hardened by checking and controlling the power supply current in real line is effective.

关 键 词：CMOS 单粒子锁定 SOI材料 DDS器件 防护电路设计 辐射试验 

分 类 号：V443[航空宇航科学与技术—飞行器设计]