电子封装用金刚石/铜复合材料界面与导热模型的研究进展  

Recent Progress on Interface and Thermal Conduction Models of Diamond/Copper Composites Used as Electronic Packaging Materials

作　　者：邓佳丽[1] 张洪迪[1] 范同祥[1] 汝金明[2] 

机构地区：[1]上海交通大学金属基复合材料国家重点实验室,上海200240 [2]江苏大学先进制造和现代装备技术研究所,镇江212013

出　　处：《材料导报》2016年第3期19-28,共10页Materials Reports

摘　　要：金刚石/铜复合材料具有高热导率、高强度、热膨胀系数可调的优点,是极具发展潜力的新一代电子封装材料。针对复合材料两相界面结合较差的问题,目前主要采用添加活性元素在界面处生成碳化物层的方法来改善。论述了活性元素添加的两种手段,即基体合金化和金刚石表面金属化的研究进展,并归纳了金刚石/铜复合材料导热模型的发展情况,最后提出了金刚石/铜复合材料在界面研究中面临的挑战和其未来努力的方向。With the advantages of high thermal conductivity, high strength and tailored coefficient of thermal expansion, diamond/copper composites are the most potential electronic packaging materials. In order to improve the poor combination at the interface, scholars tend to use active elements to form carbides at the interface. Matrix allo- ying and diamond surface metallization are two effective ways. The recent progress on these two ways is summarized and the development of heat transfer models is introduced systematically. In the end, the challenges and future direc- tion regarding to interface study are proposed.

关 键 词：金刚石/铜复合材料 基体合金化 表面金属化 碳化物 模型 

分 类 号：TB333[一般工业技术—材料科学与工程]