Excitonic transitions in Be-doped GaAs/AlAs multiple quantum well  

作　　者：郑卫民 李素梅 丛伟艳 王爱芳 李斌 黄海北 

机构地区：[1]School of Space Science and Physics, Shandong University, Weihai 264209, China [2]School of Information Engineering. Shandong University， Weihai 264209， China [3]Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China [4]school of Chemistry, the University of Melbourne, Victoria 3010, Australia

出　　处：《Chinese Physics B》2016年第4期330-334,共5页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.61178039);the Natural Science Foundation of Shandong Province;China(Grant No.ZR2012FM028)

摘　　要：A series of GaAs/A1As multiple-quantum wells doped with Be is grown by molecular beam epitaxy. The photolu- minescence spectra are measured at 4, 20, 40, 80, 120, and 200 K, respectively. The recombination transition emission of heavy-hole and light-hole free excitons is clearly observed and the transition energies are measured with different quantum well widths. In addition, a theoretical model of excitonic states in the quantum wells is used, in which the symmetry of the component of the exciton wave function representing the relative motion is allowed to vary between the two- and three- dimensional limits. Then, within the effective mass and envelope function approximation, the recombination transition energies of the heavy- and light-hole excitons in GaAs/A1As multiple-quantum wells are calculated each as a function of quantum well width by the shooting method and variational principle with two variational parameters. The results show that the excitons are neither 2D nor 3D like, but are in between in character and that the theoretical calculation is in good agreement with the experimental results.A series of GaAs/A1As multiple-quantum wells doped with Be is grown by molecular beam epitaxy. The photolu- minescence spectra are measured at 4, 20, 40, 80, 120, and 200 K, respectively. The recombination transition emission of heavy-hole and light-hole free excitons is clearly observed and the transition energies are measured with different quantum well widths. In addition, a theoretical model of excitonic states in the quantum wells is used, in which the symmetry of the component of the exciton wave function representing the relative motion is allowed to vary between the two- and three- dimensional limits. Then, within the effective mass and envelope function approximation, the recombination transition energies of the heavy- and light-hole excitons in GaAs/A1As multiple-quantum wells are calculated each as a function of quantum well width by the shooting method and variational principle with two variational parameters. The results show that the excitons are neither 2D nor 3D like, but are in between in character and that the theoretical calculation is in good agreement with the experimental results.

关 键 词：GaAs/GaA1As mulitiple quantum wells heavy- and light-hole excitons photoluminescence spec-tra variational calculation 

分 类 号：O471.1[理学—半导体物理]