Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse  

作　　者：席晓文 柴常春 赵刚 杨银堂 于新海 刘阳 

机构地区：[1]Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics,Xidian University [2]Complicated Electromagnetic Environment Laboratory of China Academy of Engineering Physics,Institute of Applied Electronics, China Academy of Engineering Physics

出　　处：《Chinese Physics B》2016年第4期456-460,共5页中国物理B（英文版）

基　　金：supported by the National Basic Research Program of China(Grant No.2014CB339900);the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology,China Academy of Engineering Physics(CAEP)(Grant No.2015-0214.XY.K)

摘　　要：The damage effect and mechanism of the electromagnetic pulse （EMP） on the GaAs pseudomorphic high electron mobility transistor （PHEMT） are investigated in this paper. By using the device simulation software, the distributions and variations of the electric field, the current density and the temperature are analyzed. The simulation results show that there are three physical effects, i.e., the forward-biased effect of the gate Schottky junction, the avalanche breakdown, and the thermal breakdown of the barrier layer, which influence the device current in the damage process. It is found that the damage position of the device changes with the amplitude of the step voltage pulse. The damage appears under the gate near the drain when the amplitude of the pulse is low, and it also occurs under the gate near the source when the amplitude is sufficiently high, which is consistent with the experimental results.The damage effect and mechanism of the electromagnetic pulse （EMP） on the GaAs pseudomorphic high electron mobility transistor （PHEMT） are investigated in this paper. By using the device simulation software, the distributions and variations of the electric field, the current density and the temperature are analyzed. The simulation results show that there are three physical effects, i.e., the forward-biased effect of the gate Schottky junction, the avalanche breakdown, and the thermal breakdown of the barrier layer, which influence the device current in the damage process. It is found that the damage position of the device changes with the amplitude of the step voltage pulse. The damage appears under the gate near the drain when the amplitude of the pulse is low, and it also occurs under the gate near the source when the amplitude is sufficiently high, which is consistent with the experimental results.

关 键 词：PHEMT the electromagnetic pulse damage effect 

分 类 号：TN32[电子电信—物理电子学] TQ333.93[化学工程—橡胶工业]