Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave  

作　　者：刘阳 柴常春 杨银堂 孙静 李志鹏 

机构地区：[1]Ministry of Education Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University Xi'an 710071, China [2]Space Payload System Innovation Center, China Academy of Space Technology, Xi'an 710100, China

出　　处：《Chinese Physics B》2016年第4期461-466,共6页中国物理B（英文版）

基　　金：supported by the National Basic Research Program of China(Grant No.2014CB339900);the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology;China Academy of Engineering Physics(Grant No.2015-0214.XY.K)

摘　　要：In this paper, we present the damage effect and mechanism of high power microwave （HPM） on AIGaAs/GaAs pseudomorphic high-electron-mobility transistor （pHEMT） of low-noise amplifier （LNA）. A detailed investigation is carried out by simulation and experiment study. A two-dimensional electro-thermal model of the typical GaAs pHEMT induced by HPM is established in this paper. The simulation result reveals that avalanche breakdown, intrinsic excitation, and thermal breakdown all contribute to damage process. Heat accumulation occurs during the positive half cycle and the cylinder under the gate near the source side is most susceptible to burn-out. Experiment is carried out by injecting high power microwave into GaAs pHEMT LNA samples. It is found that the damage to LNA is because of the burn-out at first stage pHEMT. The interiors of the damaged samples are observed by scanning electron microscopy （SEM） and energy dispersive spectrometer （EDS）. Experimental results accord well with the simulation of our model.In this paper, we present the damage effect and mechanism of high power microwave （HPM） on AIGaAs/GaAs pseudomorphic high-electron-mobility transistor （pHEMT） of low-noise amplifier （LNA）. A detailed investigation is carried out by simulation and experiment study. A two-dimensional electro-thermal model of the typical GaAs pHEMT induced by HPM is established in this paper. The simulation result reveals that avalanche breakdown, intrinsic excitation, and thermal breakdown all contribute to damage process. Heat accumulation occurs during the positive half cycle and the cylinder under the gate near the source side is most susceptible to burn-out. Experiment is carried out by injecting high power microwave into GaAs pHEMT LNA samples. It is found that the damage to LNA is because of the burn-out at first stage pHEMT. The interiors of the damaged samples are observed by scanning electron microscopy （SEM） and energy dispersive spectrometer （EDS）. Experimental results accord well with the simulation of our model.

关 键 词：low noise amplifier HEMT high power microwave damage effect 

分 类 号：TN32[电子电信—物理电子学] TN015