TFT制程中高厚度ITO残留因素的研究  

Influence factors of high thickness ITO residual in TFT process

作　　者：王灿[1] 陈宁[1] 刘英伟[1] 赵磊[1] 薛大鹏[1] 杜建华[1] 郭炜[1] 王路[1] 

机构地区：[1]京东方科技集团股份有限公司,北京100176

出　　处：《液晶与显示》2016年第3期276-282,共7页Chinese Journal of Liquid Crystals and Displays

摘　　要：氧化铟锡(ITO)是薄膜晶体管工艺中最常用的透明导电薄膜,随着OLED技术的发展,ITO作为透明阳极材料也被广泛应用。在高厚度(尤其是大于70nm)非晶ITO工艺过程中,由于多种因素的影响,很容易产生残留,发生残留后会严重影响产品质量和项目进度。本文通过多次实验测试,综合多种不同厚度,尤其是针对高厚度非晶ITO,分析了TFT制程中影响残留的多种因素,考察重点因素及影响规律,有效地修正工艺条件,为之后的项目和生产过程提供了很好的参考价值。ITO（Indium Tin Oxide）is the most common transparent conductive film in the process of TFT（Thin Film Transistor）.With the development of OLED,ITO has been widely used as the transparent anode.Due to various factors,the a-ITO film which thickness is more than 70 nm is easy to make residues during wet etch process.The residues seriously affect the product quality and project schedule.Based on many different thickness test,the factors of affecting residues was analyzed in the technical process.At the same time,the key factors and influence laws were found out.The result can be a good reference for the future technical process experiment.

关 键 词：薄膜晶体管 非晶氧化铟锡 残留 成膜 刻蚀 

分 类 号：TN141.9[电子电信—物理电子学]