高阻硅衬底集总参数功分器设计  

Design of Lumped-element Power Divider on High Resistance Silicon

作　　者：刘勇[1] 陈兴国[1] 王光池[1] 刘建勇[1] 

机构地区：[1]中国电子科技集团公司第三十八研究所,安徽合肥230088

出　　处：《电子技术（上海）》2016年第3期38-40,共3页Electronic Technology

基　　金：国家自然科学基金资助项目(51205375)

摘　　要：文章介绍了高阻硅衬底集成无源器件技术,分析了功分器等效集总参数模型,并设计了一款9.5-9.9GHz的高阻硅衬底集总参数Wilkinson功分器。基于ADS软件,可对功分器版图进行仿真优化设计。该款功分器尺寸<1×0.5mm2,插损<0.5d B、隔离度>20d B、回波损耗>20d B。由于采用高阻硅衬底集成无源器件技术,功分器尺寸小、性能优越,且具有批量生产优势,应用前景广泛。High resistance silicon based integrated passive device technology was introduced, lumped –element power divider model was analyzed, and a Wilkinson power divider with band of 9.5-9.9GHz on high resistance silicon was designed in this paper. The layout of the divider can be optimized using ADS software. This divider with dimensions of 〈1×0.5mm^2, has insertion loss of 〈0.5d B, isolation characteristic of 〉20d B, and return loss of 〉20d B. Due to high resistance silicon based integrated passive device technology, the divider is small with excellent performance, and easy to be produced in mass, which can be used for a variety of applications.

关 键 词：集总参数 无源器件 功分器 高阻硅 

分 类 号：TN943.3[电子电信—信号与信息处理]