弛豫对低场下的薄膜磁致伸缩性能影响模型  

A Model of Relax Effect for Magnetostriction of Film in Low Field

作　　者：谢海涛[1] 斯永敏[1] 马青松[1] 刘希从[1] 

机构地区：[1]国防科技大学材料与应用化学系,湖南长沙410073

出　　处：《材料科学与工程》2002年第3期396-398,409,共4页Materials Science and Engineering

基　　金：国家自然科学基金资助项目 ( 599710 64)

摘　　要：基于非晶合金结构微缺陷的Egami模型 ,本文提出了一个弛豫影响低场下的磁致伸缩性能模型。在此模型中 ,低磁场下的磁化和磁致伸缩乃是 180°磁畴旋转的结果 ,而 180°磁畴的壁移磁化过程将被非晶的结构微缺陷所钉扎 ,而在较高磁场情况下 ,不产生磁致伸缩的壁移磁化过程被启动。退火过程将发生非晶相的结构弛豫 ,使非晶相内由结构缺陷产生的应力降低 ,从而导致低磁场下的磁致伸缩得以提高。此模型可以很好地解释各工艺状态的Tb0 .2 7Dy0 .73 Fe2A new model of relax effect for magnetostriction in low field is put forward in this paper on the base of Egami model describing amophous alloy microstructure flaw.In the model,the magnetization and magnetostriction are led by the rotation of 180° domain walls in low magnetic field while the motion of 180° domain walls is pinned by the microstructure flaw,in the high magnetic field,the magnetization only caused by motion of 180° domain walls cannot lead any magnetostriction.Relax of amorphous phase structure reduce the stress caused by microstructure flaw,so that annealing process can enhance value of magnetostriction in low magnetic field.The model is in good agreement with value of magnetostriction in low field of Tb 0.27 Dy 0.73 Fe 2 films under various processes.

关 键 词：超磁致伸缩 薄膜 非晶态 弛豫 巨磁致伸缩材料 Egami微观应力涨落模型 

分 类 号：TM27[一般工业技术—材料科学与工程]