Controlling the Goos-H?nchen Shift via Incoherent Pumping Field and Electron Tunneling in the Triple Coupled InGaAs/GaAs Quantum Dots  

作　　者：R.Nasehi S.H.Asadpour H.Rahimpour Soleimani M.Mahmoudi 

机构地区：[1]Department of Physics,University of Zanjan,University Blvd. [2]Department of Physics,University of Guilan

出　　处：《Chinese Physics Letters》2016年第1期55-59,共5页中国物理快报（英文版）

摘　　要：We study the controlling of the Goos-Hanchen （GH） shifts in reflected and transmitted light beams in the triple coupled InGaAs/GaAs quantum dot （QD） nanostructures with electron tunneling and incoherent pumping field. It is shown that the lateral shift can become either large negative or large positive, which can be controlled by the electron tunneling and the rate of incoherent pump field in different incident angles. It is also demonstrated that the properties of the OH shifts are strongly dependent on the probe absorption beam of the intracavity medium due to the switching from superluminal light propagation to subluminal behavior or vice versa. Our suggested system can be considered as a new theoretical method for developing a new nano-optoelectronic sensor.We study the controlling of the Goos-Hanchen （GH） shifts in reflected and transmitted light beams in the triple coupled InGaAs/GaAs quantum dot （QD） nanostructures with electron tunneling and incoherent pumping field. It is shown that the lateral shift can become either large negative or large positive, which can be controlled by the electron tunneling and the rate of incoherent pump field in different incident angles. It is also demonstrated that the properties of the OH shifts are strongly dependent on the probe absorption beam of the intracavity medium due to the switching from superluminal light propagation to subluminal behavior or vice versa. Our suggested system can be considered as a new theoretical method for developing a new nano-optoelectronic sensor.

关 键 词：GaAs on it is of Controlling the Goos-H?nchen Shift via Incoherent Pumping Field and Electron Tunneling in the Triple Coupled InGaAs/GaAs Quantum Dots for in 

分 类 号：O471.1[理学—半导体物理]