Impact of Native Defects in the High Dielectric Constant Oxide HfSiO_4 on MOS Device Performance  

作　　者：董海宽 史力斌 

机构地区：[1]School of Mathematics and Physics,Bohai University

出　　处：《Chinese Physics Letters》2016年第1期92-95,共4页中国物理快报（英文版）

基　　金：Supported by the Science Foundation from Education Department of Liaoning Province under Grant No L2014445

摘　　要：Native dejects in HfSiO4 are investigated by first principles calculations. Transition levels of native detects can be accurately described by employing the nonlocal HSE06 hybrid functional. This methodology overcomes the band gap problem in traditional functionals. By band alignments among the Si, GaAs and HfSiO4. we are able to determine the position of defect levels in Si and GaAs relative to the HfSiO4 band gap. We evaluate the. possibility of these defects acting as fixed charge. Native defects lead to the change of valence and conduction band offsets. Gate leakage current is evaluated by the band offset. In addition, we also investigate diffusions of native defects, and discuss how they affect the MOS device performance.Native dejects in HfSiO4 are investigated by first principles calculations. Transition levels of native detects can be accurately described by employing the nonlocal HSE06 hybrid functional. This methodology overcomes the band gap problem in traditional functionals. By band alignments among the Si, GaAs and HfSiO4. we are able to determine the position of defect levels in Si and GaAs relative to the HfSiO4 band gap. We evaluate the. possibility of these defects acting as fixed charge. Native defects lead to the change of valence and conduction band offsets. Gate leakage current is evaluated by the band offset. In addition, we also investigate diffusions of native defects, and discuss how they affect the MOS device performance.

关 键 词：MOS SI of Impact of Native Defects in the High Dielectric Constant Oxide HfSiO4 on MOS Device Performance GAAS in on 

分 类 号：TN386[电子电信—物理电子学]