一种高可靠星载大容量存储器的坏块表存储方案设计  

Design of a High-Reliable NAND FLASH Bad Block Table Storage Scheme

作　　者：李姗[1,2,3] 宋琪[2,3] 朱岩[2] 安军社[2] 

机构地区：[1]中国科学院信息工程研究所,北京100093 [2]中国科学院空间科学与应用研究中心,北京100190 [3]中国科学院大学,北京100049

出　　处：《微电子学与计算机》2016年第4期73-76,共4页Microelectronics & Computer

基　　金：中国科学院战略性先导科技专项(XDA04060300)

摘　　要：通过分析传统NAND FLASH坏块信息存储方式,聚焦问题所在点,提出了一种高可靠性的坏块表存储方案设计.在存储区中划分出一块区域,将坏块信息独立存储,并通过冗余存储的方式提高坏块表存储的安全可靠性.实验表明,在坏块信息区出现使用坏块,信息存储失败或故障掉电引起的坏块信息更新不完全的情况下,该算法都能够自主定位坏块信息的异常存储份,找到可靠份,从而实现星载大容量存储器的可靠快速启动.The traditional FLASH NAND bad block information storage method is analysed, and the vulnerabilities and a high reliable bad block table storage scheme are given out. An xxx area was used to store the bad block address information separately instead of using the spare area of NAND FLASH to store the information by every page. There are two copies for the bad block information to guarantee the validity of it. The experiment shows that the scheme can locate the correct information when a bad block occurs in the reserved area or information store failed or information loss partly. And the SSR will still be able to get the correct information under those severe circumstances.

关 键 词：NAND FLASH 坏块 SSR 

分 类 号：TP31[自动化与计算机技术—计算机软件与理论]