单层陶瓷介质基片烧结技术研究  

Sintering technology of single layer ceramic dielectric substrate

作　　者：李少奎 黄俭帮 李水艳 曹志学 

机构地区：[1]成都宏明电子科大新材料有限公司,四川成都610100

出　　处：《电子元件与材料》2016年第4期4-6,共3页Electronic Components And Materials

摘　　要：单层片式瓷介电容器产业化对制备该系列产品所需的陶瓷介质基片提出了很高的质量要求,要求陶瓷介质基片（长度×宽度×厚度=（25~50）mm×（25~50）mm×（0.1~0.3）mm）厚度均匀（五点测试,偏差≤0.01 mm）、表面平整（翘曲度≤0.05 mm/25 mm）、表面光洁、无凹坑和无杂质等缺陷。通过采用＂垫片负重＂、＂生坯垒烧＂和＂生坯垒烧＋垫片负重＂烧结方式进行陶瓷介质基片的烧结试验,然后对不同烧结方式制备的介质基片表面质量进行分析和评价。结果表明：采用＂生片垒烧＋垫片负重＂烧结方式制备出尺寸为40 mm×40 mm×0.25 mm的介质基片,其厚度均匀（最大偏差为0.003 mm）、表面平整（翘曲度≤0.05 mm/25 mm）,陶瓷介质基片满足单层片式瓷介电容器后续工序对其表面质量的要求。Single layer ceramic dielectric capacitor industry has very high demands for the quality of ceramic substrate.That is,the substrate area is large（（25-50）mm×（25-50）mm））,the thickness is thin（0.1-0.3mm）and uniform（five points test,the deviation is less than or equal to 0.01 mm）,the surface is flat（warpage is less than or equal to 0.05mm/25mm）and clean,without pits,impurities or any other defects.We adopted three methods（i.e.＂pressure sintering＂,＂stack sintering＂,＂stack sintering＂ ＋ ＂pressure sintering＂）to finish the sintering experiments,then evaluated and analyzed the surface quality.The results indicate that by ＂stack sintering＂ ＋ ＂pressure sintering＂ method,we successfully prepared ceramic substrates（overall dimension：L×W×H =40 mm×40 mm×0.25 mm）which possess flat samface（warpage is less than or equal to 0.05 mm/25 mm）and uniform thickness（maximum deviation equals to 0.003 mm）.The substrates can meet the quality requirements of follow-up process of single layer ceramic capacitor.

关 键 词：瓷介电容器 单层片式 陶瓷介质基片 烧结 生坯垒烧 垫片负重 翘曲度 

分 类 号：TM53[电气工程—电器]