SnO_2纳米线基场效应晶体管的电学性能研究  

Electrical properties of SnO_2 nanowire based field effect transistor

作　　者：拜颖乾[1] 毛红梅[1] 郭军[1] 李伟[2] 

机构地区：[1]陕西铁路工程职业技术学院,陕西渭南714099 [2]西安交通大学,陕西西安710049

出　　处：《电子元件与材料》2016年第4期50-53,共4页Electronic Components And Materials

基　　金：陕西铁路工程职业技术学院科研基金项目(No.2013-35)

摘　　要：基于气-液-固生长机理和原位掺杂技术,成功制备了2%(质量分数)Sb掺杂SnO_2纳米线,所制器件可以在低压环境下工作且不受栅漏电的影响;将该纳米线作为场效应晶体管的沟道,分析了不同比例的Sb掺杂对晶体管电学性能参数的影响。结果显示:Sb质量分数由0.5%增加到2.5%时,随着Sb掺杂量的增大,晶体管的稳定性增强,但栅电压的调控能力减弱,晶体管功耗增大且对空穴和电子的迁移能力减弱。Based on gas-liquid-solid growth mechanism and in-situ doping technology,the 2%（mass fraction）Sb doped SnO_2 nanowires were successfully prepared.The as-prepared device can be operated at low operating voltage without influence by the gate leakage.Using nanowires as channel of field effect transistor,the influence of different proportions of Sb doping on the electrical properties parameters of the transistor was analyzed.The results show that when Sb doping amount increases from 0.5% to 2.5%（mass fraction）,stability of the transistor increases.With the increase of the proportion of Sb doping,the regulation ability of gate voltage is weakened,the power dissipation of the transistor is increased and the mobility of holes and electrons is decreased.

关 键 词：SnO_2纳米线 晶体管 Sb掺杂 电学性能 栅电压 功耗 

分 类 号：TN304[电子电信—物理电子学]