ZLSi7Cu2Mg合金微弧氧化工艺的研究  

Research on Micro-arc Oxidation Process of ZLSi7Cu2Mg Alloy

作　　者：姬磊[1] 刘洪斌[1] 党惊知[1] 

机构地区：[1]中北大学材料科学与工程学院,山西太原030000

出　　处：《热加工工艺》2016年第6期183-184,189,共3页Hot Working Technology

摘　　要：针对ZLSi7Cu2Mg合金进行微弧氧化,研究了不同阶段膜层的生长速度以及各工艺参数对膜厚的影响。采用恒流电源,实验过程中以电流、脉数、脉宽及氧化时间作为影响因素。结果表明,起初氧化膜生长速度很快,随氧化进行,生长速度逐渐下降,最后趋于平衡。在所有参数中,电流对于氧化膜最终厚度的影响最为明显。The micro-arc oxidation was carried out on ZLSi7Cu2Mg alloy. The influences of growth rate in different stages and process parameters on the film thickness were researched. Adopting constant current power supply, the parameters including current, rapid pulse, pulse width and oxidation time were taken as influence factors. The results show that the oxidation film grows quickly at first with the oxidation proceeding. The growth rate gradually declines and at last tends to balance. The effects of current on the oxidation film thickness are the most evident among all the parameters.

关 键 词：ZLSi7Cu2Mg 微弧氧化 恒定电流 膜厚 

分 类 号：TG174[金属学及工艺—金属表面处理] TG146.2[金属学及工艺—金属学]