S波段GaN功率放大器MMIC  

S-Band GaN Power Amplifier MMIC

作　　者：王会智[1] 吴洪江[2] 张力江[2] 冯志红[1] 崔玉兴[2] 

机构地区：[1]中国电子科技集团公司第十三研究所专用集成电路国家重点实验室,石家庄050051 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2016年第4期271-275,共5页Semiconductor Technology

摘　　要：基于0.25μm Ga N HEMT工艺,研制了一款S波段Ga N功率放大器单片微波集成电路（MMIC）。该电路采用三级拓扑放大结构,提高了放大器的增益;采用电抗匹配方式,减小了电路输出级的损耗,提高了MMIC的功率和效率。输出级有源器件的布局优化,改善了放大器芯片的温度分布特性。测试结果表明,在2.8~3.6 GHz测试频带内,在脉冲偏压28 V（脉宽100μs,占空比10%）时,峰值输出功率大于60W,功率附加效率大于45%,小信号增益大于34 d B,增益平坦度在±0.3 d B以内,输入电压驻波比在1.7以下;在稳态偏压28 V时,连续波饱和输出功率大于40 W,功率附加效率38%以上。该MMIC尺寸为4.2 mm×4.0 mm。Based on 0. 25 μm Ga N HEMT technology,a S-band power amplifier MMIC was developed. The amplifier consisted of three stages to achieve higher gain,and adopted reactance matching network to reduce the inserting loss of output stage and thus to increase the output power and associated efficiency of the MMIC. The Ga N HEMTs layout of output stage were optimized to improve temperature distribution performance of the amplifier chip. The test results show that at the frequency of 2. 8 GHz to3. 6 GHz and the pulsed bias of 28 V（ 100 μs pulse width and 10% duty cycle）,the peak saturated output power is 60 W with greater than 45% power-added efficiency,the amplifier delivers a small signal gain larger than 34 d B with ± 0. 3 d B flateness,input-port VSWR is less than 1. 7. At 28 V biased voltage,the saturated output power of the continuous wave is larger than 40 W with greater than 38% power-added efficiency over the same frequency range. The size of the MMIC is 4. 2 mm × 4. 0 mm.

关 键 词：氮化镓 功率放大器 S波段 单片微波集成电路(MMIC) 连续波(CW) 脉冲 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN722.75