带有p型柱体的三维阳极短路LIGBT结构  

Structure of 3D Shorted-Anode LIGBT with the p-Pillar

作　　者：王柳敏 金锐 徐晓轶 谢刚[1] 盛况[1] 

机构地区：[1]浙江大学电气工程学院,杭州310007 [2]国网智能电网研究院电工新材料与微电子研究所,北京102200 [3]国家电网公司南通供电公司,江苏南通226006

出　　处：《半导体技术》2016年第4期280-285,共6页Semiconductor Technology

基　　金：国家高科技发展研究计划(863计划)资助项目(2014AA052401);国网科技项目(SGRI-WD-71-14-005)

摘　　要：为了有效消除器件的逆阻现象,提出了一种带有p型柱体的三维阳极短路横向绝缘栅双极型晶体管(SA-LIGBT)结构。p型柱体位于n型缓冲层中,提高了集电极区域的短路电阻,从而使逆阻现象完全消失。另一方面,p型柱体会向漂移区注入更多的空穴,可以增强通态条件下器件的电导调制效应,降低器件的通态压降。利用三维仿真软件Crosslight-APSYS仿真研究了p型柱体的高度、宽度和长度对逆阻现象以及对器件通态压降和关断速度的影响。结果表明,当p型柱体的高度为1μm,宽度为12μm,长度为20μm时,器件的逆阻现象完全消失。通态压降为1.61 V,关断时间为110.3 ns,而传统结构LIGBT的通态压降为1.56 V,关断时间为2.33μs。The structure of three-dimensional shorted-anode lateral insulated gate bipolar transistor（ SA-LIGBT） with the p-pillar was proposed to eliminated the snap-back. With the p-pillar region in nbuffer zone,the collector short resistance is increased,therefore the snap-back is completely eliminated.On the other hand,the hole injection is enhanced into the drift region by the p-pillar,the conductivity modulation effect of the device in the on-state is increased and the on-state voltage drop of the device is reduced. The impacts of the height,the width and the length of the p-pillar on the snap-back phenomenon,the on state voltage drop and the switching speed were researched by 3-D numerical tool— Crosslight-APSYS. The results show that the snap-back phenomenon of the device is completely eliminate when the height,width and length of the p-pillar are 1 μm,12 μm and 20 μm,respectively. The onstate voltage drop is 1. 61 V and the turn-off time is 110. 3 ns,while the on-state voltage drop and turnoff time of the conventional LIGBT are 1. 56 V and 2. 33 μs,respectively.

关 键 词：三维 横向绝缘栅双极型晶体管(LIGBT) 阳极短路 p型柱体 逆阻效应 

分 类 号：TN386[电子电信—物理电子学]