薄膜晶体管中绝缘层的研究现状与趋势  

Research status and trends of insulating layer in thin-film transistor

作　　者：王东平[1] 谢应涛[1] 欧阳世宏[1] 朱大龙[1] 许鑫[1] 谭特 方汉铿 

机构地区：[1]上海交通大学电子工程系TFT-LCD关键材料及技术国家工程实验室,上海200240

出　　处：《液晶与显示》2016年第4期380-385,共6页Chinese Journal of Liquid Crystals and Displays

摘　　要：本文主要介绍了绝缘层在薄膜晶体管中的重要作用,总结了在薄膜晶体管中应用的绝缘层材料种类及其特点,介绍了不同绝缘层的制备工艺,以及各种制备工艺的原理与特点。最后,通过分析近几年有关薄膜晶体管绝缘层的文献,介绍了薄膜晶体管在制备过程中遇到的主要问题及当前的研究热点,并对未来薄膜晶体管中绝缘层的制备工艺和绝缘材料的研究方向进行了展望。This paper mainly describes the important role of thin film transistor dielectric,and summarizes the dielectric material type and its characteristics in the thin film transistor application,describes the preparation process of different insulation layers,and the principle and characteristic between different processes.Finally,through analysis of the latest literature on thin film transistor dielectric,the paper summarizes the main problems encountered in the preparation process and the current research focus,and finally prospects the future research directions of the technology for preparing thin film transistors and the dielectric materials.

关 键 词：薄膜晶体管 溶胶凝胶法 紫外光退火 低温工艺 

分 类 号：TN321.5[电子电信—物理电子学]