溅射制备CdS薄膜及其在CdTe电池中的应用  

The prepartion of sputtered CdS film and its application in CdTe solar cell

作　　者：高文敏[1] 武莉莉[1] 曾广根[1] 王文武[1] 李卫[1] 张静全[1] 黎兵[1] 冯良桓[1] 

机构地区：[1]四川大学材料科学与工程学院,成都610064

出　　处：《功能材料》2016年第3期47-50,共4页Journal of Functional Materials

基　　金：国家重点基础研究发展计划(973计划)资助项目(2011CBA00708)

摘　　要：采用射频磁控溅射方法分别在石英玻璃和TCO玻璃上制备了不同厚度的CdS薄膜,研究了CdS薄膜厚度对薄膜结构和光学性质的影响。在不同厚度的CdS/TCO衬底上,进一步制备成CdTe薄膜太阳电池。结果表明,CdS薄膜厚度的增加有利于薄膜的生长与结晶;110nm的薄膜具有禁带宽度为2.41eV的最大值;测试电池性能,得到CdS厚度为110nm的电池具有11.42%的最高转换效率。CdS thin films with different thickness were deposited on fased sillican and TCO glass using radio frequency magnetron sputtering method.The influence of thickness on the structural and optical properties was studied.CdS films with different thickness were used to prepare CdTe solar cells.The results show that increasing thickness of the film is beneficial to its crystallization.The energy band gap of the film with the thickness110 nm shows the maximum value of 2.41 eV.As for CdS/CdTe solar cells,the maximum transfer efficiency reached 11.42% with the thickness 110 nm.

关 键 词：磁控溅射 CDS薄膜 CdS/CdTe电池 

分 类 号：TB332[一般工业技术—材料科学与工程]