Ge_(15)Ga_(10)Te_(75)薄膜的磁控溅射制备及性能的可控研究  

The controllable performance of Ge_(15)Ga_(10)Te_(75) thin films deposited by magnetron sputtering

作　　者：齐磊[1] 王国祥[1] 李双[1] 沈祥[1] 徐培鹏 李军 吕业刚[1] 戴世勋[1] 聂秋华[1] 

机构地区：[1]宁波大学高等技术研究院红外材料及器件实验室,浙江宁波315211

出　　处：《功能材料》2016年第4期17-22,共6页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(61377061;61306147);浙江省公益技术研究工业资助项目(2014C31146);浙江省中青年学科带头人学术攀登资助项目(pd2013092);浙江省自然科学基金资助项目(LQ15F040002)

摘　　要：采用磁控溅射法制备了Ge15Ga10Te75薄膜,研究溅射工艺对薄膜结构与性能的影响,并分析了在不同热处理温度（200-280℃）退火后薄膜光学特性的变化.通过扫描电子显微镜、X射线衍射仪、显微拉曼光谱仪、分光光度计等测试手段对热处理前后薄膜样品的微观结构和光学特性进行了表征,结果表明,3次不同工艺下制备的沉积态薄膜组分与靶材偏差较小,且均是非晶态.沉积态薄膜的短波截止波长均在1μm 左右;当退火温度（Ta）大于薄膜的玻璃转化温度（Tg）时,薄膜的光学带隙（Egopt）随着退火温度的增加而逐渐减小,沉积态薄膜的光学带隙分别为1.05,1.06和1.07eV,而在280℃退火后薄膜光学带隙分别降至0.38,0.42和0.45eV,以上3次实验结果表明,不同工艺下制备的Ge15Ga10Te75薄膜组分均匀可控,热学和光学参数较一致.The amorphous Ge_(15)Ga_(10)Te_(75) thin film was prepared by magnetron sputtering deposition technique.Effect of heat treatment on the microstructure and optical properties of Ge_(15)Ga_(10)Te_(75) thin films has been investigated.The films annealed in the range of 200-280℃ were characterized by X-ray diffraction,Raman spectroscopy and spectrophotometer.The results indicate that the as-deposited films prepared by three different processes were close to the target composition.These as-deposited films were amorphous,possessing the cut-off wavelength about 1μm.With the annealing temperature increasing,the optical band gap decreased.The optical band gap of the as-deposited thin films were 1.05,1.06 and 1.07 eV,which finally decreased to 0.38,0.42and0.45 eV after annealing at 280℃.Experimental results show that Ge_(15)Ga_(10)Te_(75) thin films,prepared under three different processes,exhibiting a uniformly controllable composition,approximately thermal and optical parameters.

关 键 词：Ge15Ga10Te75 磁控溅射 XRD SEM 透过光谱 RAMAN光谱 光学带隙 

分 类 号：TN213[电子电信—物理电子学]