双极性忆阻器模型参数对蕴含逻辑门的影响  

Influence of Parameters of the Bipolar Memristor Model on IMPLY Logic Gate

作　　者：张波[1] 蔡理[1] 冯朝文[1] 王森[1] 杨晓阔[1] 张明亮[1] 秦涛[1] 刘小强[1] 崔焕卿[1] 

机构地区：[1]空军工程大学理学院,西安710051

出　　处：《微纳电子技术》2016年第4期220-226,共7页Micronanoelectronic Technology

基　　金：国家自然科学基金青年科学基金资助项目(61401498);陕西省自然科学基金资助项目(2014JQ8343)

摘　　要：首先深入分析了具有阈值特性的双极性忆阻器模型的阈值电压和高低阻态开关特性,然后基于此模型设计了蕴含逻辑门电路,该设计有效解决了由线性漂移忆阻器模型构建的蕴含逻辑门电路存在的状态漂移问题。最后分别研究了忆阻值变化快慢参数(β)、阈值电压(V_t)和高低阻态阻值比率(a)对蕴含逻辑门电路运算速度和功率损耗的影响。理论分析和电路仿真表明,β增大或V_t和a减小,电路运算速度提高;β增大或a减小,电路功耗减少,V_t对电路功耗影响很小。研究成果为进一步设计运算速度更快、功耗更低的全加器和多路器等逻辑电路提供理论依据。The characteristics of the threshold voltage and high-and low-resistance states switching of the bipolar memristor model with threshold property were deeply analyzed and an IMPLY logic gate circuit was designed based on the model.The proposed gate circuit effectively solves the state drift which exists in IMPLY logic gate circuits based on the linear drift memristor model.The effects of the change rate of memristance（β）,the threshold voltage（V_t）and the resistance ratio of high-and low-resistance states（a）on the operation speed and power dissipation of IMPLY logic gate circuit were researched,respectively.The theoretical analysis and circuit simulation show that the circuit operation speed is improved by increasingβor decreasing V_tand a,and the power dissipation of the circuit is reduced by increasingβor decreasing a,and V_thas little influence on the power dissipation of the circuit.The research results will provide the theoretical foundation for designing logic circuits such as full adders and multiplexers with faster operation speed and lower power dissipation.

关 键 词：阈值 忆阻器模型 蕴含逻辑门 状态漂移 运算速度 功率损耗 

分 类 号：TN4[电子电信—微电子学与固体电子学]