基于LPIND的硅基等离子天线  

Silicon-based plasma antenna based on LPIND

作　　者：刘会刚[1] 梁达[1] 任立儒[1] 耿卫东[1] 

机构地区：[1]南开大学电子信息与光学工程学院,天津300071

出　　处：《中国科技论文》2016年第2期134-138,共5页China Sciencepaper

基　　金：国家自然科学基金资助项目(61401237);天津市自然科学基金资助项目(13JCQNJC01200);高等学校博士学科点专项科研基金资助项目(20130031120034);国家级大学生创新创业训练计划资助项目(201410055056)

摘　　要：首先介绍了LPIND(Lateral Positive-Intrinsic-Negative Diode)及其在硅基等离子天线方面的应用,并对LPIND进行建模,仿真分析了不同SOI(Silicon On Insulator)埋层材料对LPIND本征区载流子浓度的影响,仿真结果显示,LPIND的自加热效应会降低本征区载流子浓度,通过改变埋层材料,增加埋层的热导率,可以减弱自加热效应。其次给出了LPIND本征区电导率的仿真结果,完成了基于LPIND的半波偶极子天线的设计与仿真,仿真结果显示,本征区电导率和硅衬底厚度会影响天线的回波损耗(S11)。最后总结了降低LPIND静态功耗的有效设计方法。The LPIND(Lateral Positive-Intrinsic-Negative Diode)and its application in silicon-based plasma antenna are introduced.The LPIND model is established.The effect of SOI(Silicon On Insulator)buried layer of different material on LPIND intrinsic carrier concentration are simulated and analyzed.Simulation results show that self-heating effect of LPIND can decrease intrinsic carrier concentration.Changing material or increasing thermal conductivity of buried layer can reduce self-heating effect.The conductivity of intrinsic layer is simulated.Half-wave dipole silicon-based plasma antenna based on LPIND array is designed and simulated.Simulation results show that return loss(S11)of half-wave dipole silicon-based plasma antenna is influenced by the conductivity of intrinsic layer and silicon substrate thickness.The effective design methods are proposed to reduce static power of LPIND.

关 键 词：LPIND 自加热效应 硅基等离子天线 低功耗 

分 类 号：TN820[电子电信—信息与通信工程]