Growth of InAlGaN Quaternary Alloys by Pulsed Metalorganic Chemical Vapor Deposition  

作　　者：全汝岱 张进成 许晟瑞 薛军帅 赵一 宁静 林志宇 任泽阳 郝跃 

机构地区：[1]Key Laboratory of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University

出　　处：《Chinese Physics Letters》2016年第4期139-142,共4页中国物理快报（英文版）

基　　金：Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02308-002;the National Natural Science Foundation of China under Grant Nos 11435010,61474086 and 61334002

摘　　要：Epitaxial growth of InA1GaN/GaN structures are performed on the c-plane sapphire by pulsed metal organic chemical vapor deposition with different triethylgallium （TEGa） flows in the growth process of InA1GaN qua- ternary alloys. X-ray photoelectron spectroscopy results show that the A1/In ratio of the samples increases as the TEGa flows increase in the InAIGaN quaternary growth process. High-resolution x-ray diffraction results show that the crystal quality is improved with increasing TEGa flows. Morphology of the InA1GaN/GaN het- erostructures is characterized by an atomic force microscopy, and the growth mode of the InA1GaN quaternary shows a 21） island growth mode. The minimum surface roughness is 0.2Ohm with the TEGa flows equaling to 3.6 μool/rain in rms. Hall effect measurement results show that the highest electron mobilityμ is 1005.49 cm2/Vs and the maximal two-dimensional electron gas is 1.63 × 1013 em-2.Epitaxial growth of InA1GaN/GaN structures are performed on the c-plane sapphire by pulsed metal organic chemical vapor deposition with different triethylgallium （TEGa） flows in the growth process of InA1GaN qua- ternary alloys. X-ray photoelectron spectroscopy results show that the A1/In ratio of the samples increases as the TEGa flows increase in the InAIGaN quaternary growth process. High-resolution x-ray diffraction results show that the crystal quality is improved with increasing TEGa flows. Morphology of the InA1GaN/GaN het- erostructures is characterized by an atomic force microscopy, and the growth mode of the InA1GaN quaternary shows a 21） island growth mode. The minimum surface roughness is 0.2Ohm with the TEGa flows equaling to 3.6 μool/rain in rms. Hall effect measurement results show that the highest electron mobilityμ is 1005.49 cm2/Vs and the maximal two-dimensional electron gas is 1.63 × 1013 em-2.

关 键 词：of Al by GAN in is AFM MODE AIN 

分 类 号：TG131[一般工业技术—材料科学与工程] TN386[金属学及工艺—合金]