柔性环境应变对InGaAsP量子阱材料增益的影响  

The effects of external strain on the gain of InGaAsP quantum well

作　　者：欧春晖[1] 罗毅[1] 王健[1] 孙长征[1] 韩彦军[1] 熊兵[1] 郝智彪[1] 汪莱[1] 李洪涛[1] 

机构地区：[1]清华大学电子工程系,信息科学与技术国家实验室,北京100084

出　　处：《中国科学：物理学、力学、天文学》2016年第4期86-91,共6页Scientia Sinica Physica,Mechanica & Astronomica

基　　金：国家重点基础研究发展计划(编号:2015CB351900);国家高技术研究发展计划(编号:2015AA017101);国家自然科学基金(批准号:61574082,51561165012,61176015,61176059,61210014,61321004,61307024);清华大学自主科研计划(编号:20131089364)资助项目

摘　　要：本文采用k×p方法,从能带结构出发,研究了柔性环境应变对于InGaAsP量子阱增益的影响.计算出在不同注入载流子浓度情况下,垂直(z)方向和水平(x)方向应变对于不同组分InGaAsP量子阱TE,TM模增益谱的影响,发现z方向压应变的主要作用是使TE模的增益峰位置发生蓝移,并提高TM模的增益峰的数值;x方向压应变使TE增益峰位置发生红移、TM模增益峰位置发生蓝移,并降低TM模增益峰的数值.而z方向张应变的主要作用是使TE模的增益峰位置发生红移,并降低TM模的增益峰的数值;x方向张应变使TE增益峰位置发生蓝移、TM模增益峰位置发生红移,并提高TM模增益峰的数值.进一步得出为保持InGaAsP量子阱材料增益的波动变化量不超过30%、增益峰位置移动量不超过20 nm,柔性环境对其施加的应变应控制在3‰以内.The k·p method is adapted to study the effects of external strain on the gain spectrum of InGaAsP quantum wells. Firstly, the band structure under vertical（z-axis） and horizontal（x-axis） strain is calculated by the k·p method. Then, the effects of the strain on the gain spectrum of TE and TM modes of InGaAsP quantum well with different atomic ratio are calculated based on the calculated band structures. The calculation results show that the compressive strain along z-axis shifts the gain spectrum of TE mode to shorter wavelength and increases the peak value of the gain spectrum of TM mode. While it decreases the peak value of the gain spectrum of TM mode, the compressive strain along x-axis shifts the gain spectrum of TE and TM modes to longer and shorter wavelength. respectively. The tensile strain along z-axis shifts the gain spectrum of TE mode to longer wavelength and decreases the peak value of the gain spectrum of TM mode. While it increases the peak value of the gain spectrum of TM mode, the tensile strain along x-axis shifts the gain spectrum of TE and TM modes to shorter and longer wavelength, respectively. Finally, the effects of the strain on the gain spectrum of TE and TM modes of InGaAsP quantum well are calculated under different injection carrier density, which provide the similar result as that in different atom ratio. Bases on the calculation above, the external strain affects the performance of the quantum well. The external strain on InGaAsP quantum well should not exceed 3‰ in order to limit the fluctuation of the gain and the shift of the gain peak to be less than 30% and 20 nm, respectively.

关 键 词：应变 InGaAsP量子阱 增益谱 

分 类 号：O471.1[理学—半导体物理]