基于硅衬底静电感应晶体管器件仿真与研究  

Research on and Simulation of Static Induction Transistor Based on Silicon Substrate

作　　者：王富强[1] 瞿宜斌 马行空[1] 

机构地区：[1]中国人民解放军第93856部队

出　　处：《电子科技》2016年第4期12-15,共4页Electronic Science and Technology

摘　　要：针对静电感应晶体管理论研究迟滞于实践过程,文中利用软件Silvaco Tcad,从器件仿真入手,对影响硅基表面栅静电感应晶体管器件电学性能进行了理论研究。仿真得到了反偏栅压约为0 V、漏电压<20 V时,器件表现类五极管饱和特性曲线,器件电流约为10^(-5)A,此时沟道状态为预夹断。当反偏栅压为-1.5 V、漏电压逐渐增大到300 V时,器件表现为类三极管不饱和特性曲线,器件电流约为10^(-6)A,此时沟道状态为完全夹断,研究结果静电感应晶体管工艺实践提供了参考。The practice process of static induction transistor（ SIT） stays ahead of theoretical research. A theoretical research on the electrical performance of the SIT based on Silicon by is performed from the point of device simulation using the Silvaco Tcad software. The results show that the I-V performance of the device is the class pentode saturation characteristic,with a device current of about 10^（- 5）A and pre-pinch off channel state at about 0 V reverse bias gate voltage and 0 ~ 20 V drain voltage. Secondly,under the condition of- 1. 5 V reverse bias gate voltage and0 ~ 300 V drain voltage,the I-V performance of the device shows the class triode unsaturated characteristic curve,with a device current of approximately 10^（-6）A and completely pinched off channel.

关 键 词：静电感应晶体管 沟道势垒 器件仿真 

分 类 号：TN32[电子电信—物理电子学]