铟凸点对倒装互连影响的研究  

Dissecting the Influence of Indium Bumps for Flip-chip

作　　者：杨超伟[1] 闫常善 王琼芳[1] 李京辉[1] 韩福忠[1] 封远庆 杨毕春[1] 左大凡 赵丽[1] 俞见云 

机构地区：[1]昆明物理研究所,云南昆明650223 [2]中国人民解放军驻298厂军代室,云南昆明650114

出　　处：《红外技术》2016年第4期310-314,共5页Infrared Technology

摘　　要：制作了2种形式的铟凸点:即直接蒸发沉积的铟柱和将铟柱回流得到的铟球。分别讨论了铟柱和铟球对倒装互连的影响,着重讨论了铟球和铟柱分别和芯片倒装互连后的剪切强度,结果发现在互连未回流的状态下铟球的剪切强度是铟柱的1.5倍,回流后铟球的剪切强度是铟柱的2.8倍。此外,分析讨论了长时间放置在空气中的铟球对倒装互连的影响,结果发现长时间放置在空气中的铟球和芯片互连后,器件的电学与机械连通性能会受到很大的影响。Two types of indium bumps have been fabricated： indium columns fabricated by direct evaporation and indium balls after reflowing indium columns. The impacts of indium columns and indium balls on flip-chip were discussed, and in particular the shear strength of indium columns and indium spheres was tested after flip-chip. Results reveal that the shear strength of indium spheres is 1.5 times higher than that of the indium columns without reflowing after flip-chip, and 2.8 times higher than that of the indium columns with reflow after flip-chip, respectively. In addition, the effects resulted from indium spheres which were exposed in the air for a long time for flip-chip were dissected. Results unravel that the indium spheres have negative influences on the electrical and mechanical connectivity of devices after flip-chip.

关 键 词：铟凸点 铟柱 铟球 倒装互连 

分 类 号：TN215[电子电信—物理电子学]