MEOMS封装的锗窗金属化结构界面特性研究  

Study on interface characteristics of metal structure on Ge window for MEOMS packaging

作　　者：王新宇[1] 史梦然[1] 

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2016年第4期452-455,共4页Laser & Infrared

摘　　要：基于微光机电系统对真空封装的要求,采用磁控溅射法在锗窗口上制备不同膜系的金属化结构,研究在相同的热处理条件下,不同膜系结构对锗窗口界面特性的影响。采用俄歇电子能谱分析原子在膜层间和膜基间的扩散行为。采用划痕测试仪分析膜基间的力学性能。结果表明:Ni元素对Au元素的阻挡效果明显,Cr/Ge的界面扩散剧烈。Cr/Ni/Au金属化结构的膜基结合力为14N,优于其他膜系结构,对于提高锗窗膜基结合强度效果最显著。The metal films on Ge window are prepared by DC magnetron sputtering to satisfy the vacuum packaging re- quirement of MEOMS devices. The effect of different metal films on interface characteristics on Ge window was studied under the same heat treatment condition. The interface diffusion characteristics between different thin films and sub- strate were analyzed by Auger electron spectroscopy. Finally, adhesion strength is analyzed by using scratching test- er. The results show that Ni can effectively prevent Au, and the interface between Ge and Cr diffuses intensively. Metal structure composed of Cr/Ni/Au can improve the adhesion strength of infrared window effectively.

关 键 词：锗窗 金属化 热处理 俄歇电子能谱 

分 类 号：TG156.22[金属学及工艺—热处理]