镉气氛退火对CdS单晶材料性能的影响  

The Effect of Cadmium Annealing on the CdS Single Crystal

作　　者：李强[1] 张颖武[1] 司华青 练小正[1] 程红娟[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《压电与声光》2016年第2期275-277,共3页Piezoelectrics & Acoustooptics

基　　金：国家重点研究项目

摘　　要：硫化镉(CdS)是一种光电性能优异的Ⅱ-Ⅵ族直接跃迁、宽带隙化合物半导体材料。将本征高阻的CdS单晶材料在镉气氛中高温退火,并对退火后的CdS材料进行电学、光学特性表征。测试结果表明,镉气氛退火可使本征高阻的CdS单晶转变为低阻CdS材料,从而实现对CdS材料电学特性调控。Cadmium sulfide（CdS）is a kind of II-VI direct transition,wide band gap compound semiconductor materials with excellent optical and electrical properties.The CdS single crystal material with high resistance was annealed in cadmium atmosphere and the electrical and optical characterization of CdS materials annealed in cadmium atmosphere was researched.The test results show that the annealing in cadmium atmosphere can change the high resistance CdS material to low resistance CdS and the electrical and optical properties of CdS material can be adjusted.

关 键 词：硫化镉(CdS) 单晶 镉气氛 退火 电学 光学 

分 类 号：TN384[电子电信—物理电子学] O782.7[理学—晶体学]