基于PSpice的功率MOSFET电压尖峰防护的仿真分析  

Simulation Analysis for Voltage Peak Protection of Power MOSFET Based on PSpice

作　　者：彭能岭[1] 李振山[1] 何文博[1] 郑维[1] 张广利[1] 

机构地区：[1]郑州宇通客车股份有限公司新能源技术部,郑州450061

出　　处：《客车技术与研究》2016年第2期4-6,共3页Bus & Coach Technology and Research

基　　金：国家科技支撑计划2013-2015:宇通插电式混合动力校车研究开发及示范应用(编号2012BAZ03726)资助

摘　　要：分析功率MOSFET用于汽车电子控制器中的高边驱动时,因汽车线束杂散电感的负面效应产生高电压尖峰的机理,采用PSpice软件对并联电容型防护电路的参数匹配进行仿真分析,并提出电路设计的原则和方法。The mechanism of high voltage peak which is generated by the negative effect of automotive wiring harness stray inductance is analyzed when the MOSFET is used for the high side driver of automobile electronic controller. A protection circuit which consists of parallel capacitor is simulated and analyzed based on PSpice software,and the principles and methods of the circuit design are presented.

关 键 词：功率MOSFET 电压尖峰 PSPICE 吸收电容 

分 类 号：U463.6[机械工程—车辆工程]