GaAs隧道结中掺杂浓度对峰值隧道电流的影响  

Effect of the Doping Concentration on the Peak Tunneling Current in the GaAs Tunnel Junction

作　　者：张曦[1] 韩颖[1] 杨建业[1] 师巨亮[1] 夏英杰[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2016年第5期292-296,350,共6页Micronanoelectronic Technology

摘　　要：有效提高隧道结的峰值隧道电流密度(Jp)是提高多结太阳电池(MJSC)聚光倍数和光电转换效率的关键。根据隧道结的电子输运原理,隧道结p区价带费米能级之上的空量子态与n区导带费米能级之下的满量子态相等时,提高掺杂浓度对提高Jp的作用是最明显的,此时两侧浓度存在一个最优比。基于该分析设计了一系列GaAs隧道结结构,采用分子束外延(MBE)技术获得了外延样品。样品的I-V测试结果与理论计算较为一致,表明增加隧道结掺杂浓度时,两侧浓度比越接近最优比时对Jp的影响越明显,反之则越不明显。The effectively enhancement of the tunnel junction peak current density（Jp）in the tunnel junction is the key to improve the concentrated ratio and photoelectric conversion efficiency of the multi-junctionsolar cells（MJSCs）.According to the principle of the electronic transport in the tunnel junction,when empty quantum states in p-region valence band above the Fermi energy level is equal to full quantum states in n-region conduction band under the Fermi energy concentration,the enhancement of Jpis the most significant by increasing the doping concentration,and there is an optimal ratio of the doping concentration on both sides simultaneously.A series of GaAs tunnel junction structures were designed based on the analysis,and the epitaxial samples were grown by the molecular beam epitaxy（MBE）technology.The I-V test result is in good agreement with the theoretical calculation of the samples,showing that the closer the doping concentration ratio of both sides approaches the optimal ratio,the more obvious the effect of the pand n-region doping concentration ratio on Jpis with the increase of the doping concentration;conversely,less obvious.

关 键 词：隧道结 峰值隧道电流 量子态 掺杂浓度 分子束外延(MBE) 

分 类 号：TN304.23[电子电信—物理电子学]