氩稀释无氨氮化硅薄膜的制备  

Preparation of Silicon Nitride Films with Argon as the Diluent Gas Without Ammonia

作　　者：赵润[1] 高鹏飞[1] 刘浩[1] 李庆伟[1] 何刚[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2016年第5期345-350,共6页Micronanoelectronic Technology

摘　　要：氮化硅(SiNx)薄膜是一种广泛应用于半导体光电器件的介质膜,其性质的优劣直接影响器件的性能。使用SiH4与NH3作为反应气体制备出的氮化硅薄膜含有大量氢,应用于某些光电器件时,会导致器件工作时光电特性不稳定。针对此问题研发了一种使用SiH4与N2作为反应气体,Ar作为稀释气体的工艺方法,即无氨工艺。使用等离子体增强化学气相沉积(PECVD)法,通过研究各工艺参数对薄膜性能的影响,制备出了一种含氢量低的氮化硅薄膜。通过傅里叶变换红外吸收谱(FTIR)测试了无氨工艺制备的氮化硅薄膜的含氢量,和使用SiH4与NH3作为反应气体制备出的氮化硅薄膜相比含氢量明显降低。The silicon nitride（SiNx）film is widely used as dielectric films in semiconductor optoelectronic devices,and its properties affect the performances of the devices directly.The silicon nitride thin films prepared by SiH4 and NH3as reactant gases contain a large amount of hydrogen and will make the photoelectric properties of some optoelectronic devices unstable.In order to solve the issue,aprocess method using SiH4 and N2as the reactant gases and Ar as the diluent gas was developed,as called the ammonia free process.By studying the influence of various process parameters on the properties of the thin films,a silicon nitride thin film with low hydrogen content was prepared by the plasma enhanced chemical vapor deposition（PECVD）.The hydrogen content of the silicon nitride thin film prepared using the ammonia free process was tested by Fourier transform infrared spectroscopy（FTIR）.The result shows that the hydrogen content of the silicon nitride thin film is significantly lower than that of the silicon nitride films prepared with SiH4 and NH3as the reactant gases.

关 键 词：氮化硅(SiNx)薄膜 等离子体增强化学气相沉积(PECVD) 无氨工艺 氩稀释 傅里叶变换红外光谱分析法(FTIR) 

分 类 号：TN304.055[电子电信—物理电子学]