一种高效率F类功率放大器芯片的设计  

Design of a Highly Efficient Class-F Power Amplifier Chip

作　　者：郑耀华[1] 林俊明[1] 陈思弟 章国豪 

机构地区：[1]广东工业大学,广州510006

出　　处：《微电子学》2016年第2期183-186,共4页Microelectronics

基　　金：广东省领军人才专项资助项目(400130002)

摘　　要：介绍了一种简单的具有谐波调谐功能的输出匹配网络,可实现2次谐波短路和3次谐波开路。利用该输出匹配网络,基于InGaP/GaAs HBT工艺,设计了一个工作于2GHz的高效率F类功率放大器,并通过搭载基板实现小型化芯片的研制。芯片测试结果表明,该功率放大器的小信号增益为35dB,1dB压缩点为34dBm,饱和输出功率为35.3dBm,效率为57%,并具有较好的谐波抑制性能。A simple output matching network with harmonic tuning function was presented.This output matching network could realize the shorting of second harmonic and the opening of third harmonic.With this output matching network,a highly efficient Class-F power amplifier operated on the frequency of 2GHz was designed in an InGaP/GaAs HBT process and a compact chip was implemented with a load board.The chip measured results showed that 35 dB of S21,34 dBm of 1dB compression,35.3dBm of saturated output power with 57 % of PAE were achieved,and the circuit had a good performance of harmonic suppression.

关 键 词：功率放大器 F类 异质结双极型晶体管 高效率 

分 类 号：TN722.75[电子电信—电路与系统] TN323.4