一种新型硅基恒流二极管的特性研究  

Study on Characteristics of a Novel Si-Based Current Regulative Diode

作　　者：柴彦科 高桦[1] 刘肃[1] 

机构地区：[1]兰州大学物理科学与技术学院微电子研究所,兰州730000

出　　处：《微电子学》2016年第2期282-284,288,共4页Microelectronics

基　　金：甘肃省科技支撑计划-工业类资助项目(1204GKCA062)

摘　　要：提出了一种新型硅基环状分布垂直沟道恒流二极管,包括并联的结型场效应晶体管和PIN整流管。建立了器件的数值模型,并利用SILVACO TCAD仿真工具对器件的恒定电流值、击穿电压等特征参数进行模拟。结果显示,该器件工作于正向时,恒流效果好,开启电压约为3V,击穿电压可达140V;该器件工作在反向时,表现出良好的整流特性,开启电压约为0.8V。A novel vertical channel structure of silicon-based current regulative diode was proposed,including parallel junction field effect transistor and PIN rectifier diode.Numerical model of the device was built,and some characteristic parameters such as constant current,breakdown voltage,were analyzed through the SILVACO TCAD simulation tools.Results showed that the device exhibited excellent constant current characteristics under forward conduction mode,its threshold voltage was about 3 V,the breakdown voltage was 140 V,and electrical characteristics were clearly superior to the existing constant current devices.When the device worked under reverse blocking mode,it exhibited good rectifying characteristics with an open voltage of about 0.8V.

关 键 词：恒流二极管 结型场效应晶体管 击穿电压 

分 类 号：TN31[电子电信—物理电子学]