不同SiC材料p^+(p^-/n^-)n^+型二极管反向恢复过程的仿真  

Simulation on Reverse Recovery Process of p^+/p^-(n^-)/n^+ Type Diodes with Different SiC Materials

作　　者：蒋佩兰[1] 韦文生[1] 赵少云[1] 刘路路[1] 

机构地区：[1]温州大学物理与电子信息工程学院,浙江温州325035

出　　处：《温州大学学报（自然科学版）》2016年第2期33-38,共6页Journal of Wenzhou University(Natural Science Edition)

基　　金：国家自然科学基金(61274006);浙江省大学生科技创新活动计划暨新苗人才计划(2014R424017)

摘　　要：讨论了Si C材料p^+/p^-(n^-)/n^+型二极管的集总电荷模型,利用Matlab编程数值仿真了p^-(n^-)型基区器件的反向恢复过程.分析了器件的反向恢复时间、反向恢复最大电流与基区的少子寿命、载流子浓度、载流子迁移率、宽度、温度等参数的关系.结果表明,用4H-Si C设计的p^-型基区二极管的反向恢复性能最优.若基区的少子寿命越短、载流子浓度越高、温度越低,则器件的反向恢复时间越短,反向恢复最大电流越小.本文可作为Si C功率二极管优化设计及其反向恢复特性仿真的教学案例.A lumped charge model for Si C material p^＋/p^-（n^-）/n^＋ type diode is proposed in this paper. The reverse recovery process of the devices with p^-（n-） type base region is numerically simulated via Matlab program. The relationship between reverse recovery time, maximum reverse recovery current and the minority carrier lifetime, carrier concentration, carrier mobility, width and temperature in base region is analyzed. The results show that the reverse recovery performance of 4H-Si C diode with p^- type base region is the best. With falling the lifetime of minority carrier and temperature while raising the concentration of carrier, the values of reverse recovery time and maximum reverse recovery current decrease. This research can be used as a teaching case for optimized design of the Si C power diode while simulating its reverse recovery characteristics.

关 键 词：SiC p+/p-(n-)/n+型二极管 反向恢复 数值模拟 

分 类 号：TN31[电子电信—物理电子学]