InAs/GaAs量子点中间带太阳电池的理论研究与优化  

Theoretical Study and Optimization of InAs/GaAs Quantum Dots Intermediate Band Solar Cells

作　　者：潘保瑞 唐吉玉[1] 朱永安[1] 何右青 陆旭兵[1] 

机构地区：[1]华南师范大学物理与电信工程学院,广州510006

出　　处：《半导体光电》2016年第2期161-164,169,共5页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(61271127)

摘　　要：基于InAs/GaAs量子点中间带太阳电池（QD-IBSC）结构和载流子漂移扩散理论建立了计算电流密度与静电势的数学模型,从理论上分析了量子点中间带太阳电池的电压电流特性,定量讨论了量子点层厚度、温度以及n型掺杂对电压电流特性的影响。模拟结果表明：在i层厚度取400nm时转化效率达到最大值14.01%;温度会对量子点中间带太阳电池的电压电流特性产生影响,温度在300-350K范围内,开路电压Voc随温度的升高而明显减小,短路电流Jsc几乎不变;对i区进行n型掺杂会抑制量子点层发挥作用。Based on the structure of InAs/GaAs quantum dot intermediate band solar cells（QD-IBSC）,carrier drift-diffusion theory and mathematic model,the relationship between voltage-current characteristics and thickness of i-region and also effects of i-region,temperature and n-type doping on the characteristics of solar cell were analyzed quantitatively for improving the efficiency of quantum dot solar cells.Theoretical simulation can be presented as follows：firstly,the conversion efficiency reaches a theoretical maximum value of 14.01% with the iregion thickness of 400nm;secondly,it is found that the temperature has an effect on the voltage-current characteristics of quantum dot solar cells,which reflects that the open-circuit voltage reduces significantly with the temperature range of 300-350 K;thirdly,the n-type doping has a potential on suppressing the quantum dot layer.

关 键 词：太阳电池 INAS/GAAS量子点 漂移扩散 I-V特性 中间带太阳电池 

分 类 号：TM914.4[电气工程—电力电子与电力传动]