Cl掺杂对n-Cu2O的光电性能的影响  

Effect of Cl Doping on Photoelectrical Properties of n-type Cu_2O

作　　者：谢思思[1] 鲁双伟 马文利[1] 杨峰[1] 席金芳 邹龙生[1] 蔡芳共[1] 程翠华[1,2] 赵勇[1,2] 阚香[1] 张勇 

机构地区：[1]西南交通大学超导与新能源研究开发中心,材料先进技术教育部重点实验室,成都610031 [2]新南威尔士大学材料科学与工程学院,悉尼2052

出　　处：《半导体光电》2016年第2期213-217,共5页Semiconductor Optoelectronics

基　　金：国家磁约束核聚变能研究专项项目(2011GB112001,2013GB110001);国际合作项目(2013DFA51050);国家自然科学基金项目(51271155,51377138);国家“863”计划项目(2014AA032701);高等学校博士学科点专项科研基金项目(新教师类,20120184120024)

摘　　要：在酸性溶液中利用恒电位沉积法在导电玻璃(ITO)上沉积Cu_2O薄膜,并以KCl为添加剂对其进行掺杂,采用场发射扫描电子显微镜(FESEM)和X射线衍射谱(XRD)等手段研究了氯掺杂对Cu_2O表面形貌和晶体结构的影响。紫外-可见吸收光光谱确定得到的Cu_2O和Cl掺杂Cu_2O(Cu_2O-Cl)样品的禁带宽度分别为1.98和1.95eV。根据表面光电压谱和相位谱,掺杂前后的Cu_2O均为n型,Cu_2O-Cl有更强的表面光电压响应。场诱导表面光电压谱结果表明未掺杂Cl的Cu_2O在加负偏压时易形成反型层;氯离子的掺杂引入杂质能级可以提高n型导电性。光电化学性能测试发现,以Cu_2O、Cu_2O-Cl为光阳极组成的光化学太阳电池,在大气质量AM 1.5G、100mW/cm^2标准光强作用下光电转换效率分别为0.12%和0.51%。Cuprous oxide（Cu2O）films and Cl-doped Cu2O were prepared in acidic solution by means of electrodeposited potentiostatically on ITO.The morphology and crystalline phase of obtained films were characterized by field emission scanning electron microscopy（FESEM）and X-ray diffraction（XRD）.By analyzing UV-vis absorbance spectra,the band gap of prinstine Cu2O and Cl-Cu2O was obtained as 1.98 eV and 1.95 eV,respectively.According to the results of surface photovoltage spectrum（SPS）and phases spectrum（PS）,Cu2O and Cu2O-Cl were both n-type.The surface photovoltage response intensity of Cl-doped Cu2O was more stronger.Results of field-induced SPS show that appling negative bias can be expected to result in the formation of an inversion layer in pristine Cu2O.The dopants of Cl in the Cu2O crystal canimprove the stability of n-type conductivity.Cl-doped Cu2O base photoelectrochemical cell shows that 0.51% of photo electricity conversion efficiency is achieved under100mW/cm-2 simulated AM 1.5 Gsunlight.

关 键 词：CU2O Cl掺杂 表面光电压谱 相位谱 光电化学性能 

分 类 号：O649[理学—物理化学]