Oxygen Scavenging Effect of LaLuO_3/TiN Gate Stack in High-Mobility Si/SiGe/SOI Quantum-Well Transistors  

作　　者：冯锦锋 刘畅 俞文杰 彭颖红 

机构地区：[1]School of Mechanical Engineering,Shanghai Jiao Tong University [2]State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences

出　　处：《Chinese Physics Letters》2016年第5期108-110,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 61306126

摘　　要：Higher-s dielectric LaLuO3, deposited by molecular beam deposition, with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconduetor field effect transistors. Threshold voltage shift and capacitance equivalent thickness shrink are observed, resulting from oxygen scavenging effect in LaLuO3 with ti-rich TiN after high temperature annealing. The mechanism of oxygen scavenging and its potential for resistive memory applications are analyzed and discussed.Higher-s dielectric LaLuO3, deposited by molecular beam deposition, with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconduetor field effect transistors. Threshold voltage shift and capacitance equivalent thickness shrink are observed, resulting from oxygen scavenging effect in LaLuO3 with ti-rich TiN after high temperature annealing. The mechanism of oxygen scavenging and its potential for resistive memory applications are analyzed and discussed.

关 键 词：SOI SiGe TIN Oxygen Scavenging Effect of LaLuO3/TiN Gate Stack in High-Mobility Si/SiGe/SOI Quantum-Well Transistors of in Gate 

分 类 号：TN386[电子电信—物理电子学] TM862[电气工程—高电压与绝缘技术]